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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2612 DESCRIPTION With TO-220 package High collector breakdown voltage : VCEO=400V(Min) APPLICATIONS For high voltage ,high speed and high power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage INC Collector-emitter voltage Emitter-base voltage E SEM ANG H Open emitter OND IC CONDITIONS TOR UC VALUE 500 400 7 3 6 1.5 UNIT V V V A A A W ae ae Open base Open collector Collector current Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature TC=25ae 30 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain DC current gain CONDITIONS IC=0.2A ,RBE= IE=10mA; IC=0 IC=1.5A; IB=0.3A IC=1.5A; IB=0.3A VCB=400V; IE=0 VCE=350V; RBE= IC=1.5A ; VCE=5V IC=3A ; VCE=5V 15 7 ,L=100mH MIN 400 7 TYP. 2SC2612 SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICBO ICEO hFE-1 hFE-2 MAX UNIT V V 1.0 1.5 100 100 |I |I V V A A Switching times ton tstg tf Fall time Turn-on time INC Storage time E SEM ANG H OND IC TOR UC 1.0 1.2 2.5 1.0 |I |I |I s s s IC=3.0A IB1=- IB2=0.6A VCCO 150V 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2612 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions(unindicated tolerance:A 0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2612 CHA IN E SEM NG OND IC TOR UC 4 |
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